BS IEC 62047-34:2019 pdf download – Semiconductor devices – Micro- electromechanical devices Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer.
1 Scope This part of IEC 62047 describes test conditions and test methods of electric character, static performances and thermal performances for MEMS pressure-sensitive devices. This document applies to test for both open and closed loop piezoresistive MEMS pressure devices on wafer. 2 Normative references The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 61 1 93-2, Quality assessment systems – Part 2: Selection and use of sampling plans for inspection of electronic components and packages IEC 60747-1 4-3, Semiconductor devices – Part 14-3: Semiconductor sensors – Pressure sensors 3 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 60747-1 4-3 and the following apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: • IEC Electropedia: available at http://www.electropedia.org/ • ISO Online browsing platform: available at http://www.iso.org/obp
3.1 piezoresistive pressure-sensitive device device that transforms pressure signal into electric signal due to piezoresistive effect, usually including cavity-membrane structure on silicon substrate and Wheatstone bridge in the membrane fabricated by MEMS technology [SOURCE: IEC 62047-33: –, 3.1 ] 3.2 closed loop piezoresistive pressure-sensitive device piezoresistive pressure-sensitive device that employs closed loop Wheatstone bridge for signal detection
3.3 open loop piezoresistive pressure-sensitive device piezoresistive pressure-sensitive device that employs open loop Wheatstone bridge for signal detection 3.4 output under normal pressure output of the pressure-sensitive device under the standard reference atmosphere pressure(1 01 ,3 kPa) 3.5 zero output output of the pressure-sensitive device when the pressure difference between both sides of the membrane structure is zero 4 Test conditions 4.1 Atmospheric conditions The measurement of characteristics shall be carried out under the following atmospheric conditions unless otherwise specified. a) Standard atmospheric conditions Temperature range: 1 5 °C to 35 °C; Relative humidity range: 20 % to 80 %; Atmospheric pressure range: 86 kPa to 1 06 kPa. b) Standard reference atmospheric conditions Temperature: 20 °C; Relative humidity: 65 %; Atmospheric pressure: 1 01 ,3 kPa. The standard reference atmospheric conditions are corrected values derived from testing values under any other atmospheric conditions. In most circumstances, temperature and atmospheric pressure are the only factors to be considered.
4.2 Electromagnetic conditions No other external magnetic field should exist in the testing environment except geomagnetic field. The specific requirements should be in accordance with the device technical conditions. 4.3 Vibration conditions No mechanical vibration should exist in the testing environment. The specific requirements should be in accordance with the device technical conditions. 4.4 Test system The test system consists of probe station, pressure control device, heating and cooling system, excitation power supply, as well as reading and recording device. The tolerance errors of the test system are listed below. a) The absolute value of the intrinsic error of pressure control device should be under 1 /3 of the intrinsic error bound of the pressure-sensitive device. b) The temperature measurement accuracy of heating and cooling system should be ±2 °C around the preset temperature.
c) The fluctuation of excitation power supply should be under 1 /5 of the intrinsic error bound of the pressure-sensitive device. d) The absolute value of the intrinsic error of the reading and recording device should be under 1 /5 of the intrinsic error bound of the pressure-sensitive device. 5 General provisions 5.1 Certificate documents The verification certificates of instrument and meter issued by metrological verification institutions should be required and valid. 5.2 Placement and preheating time The instrument and meter should be powered on for preheating before the test. The preheating time should be in accordance with the operation manual. 5.3 Connection The test system is built according to its spool drawing and circuit diagram. 6 Test items and methods 6.1 Test preparation The resistance test system of the probe station should be calibrated using standard resistance substrate. Build the test system according to 5.3. Fix the wafer on the probe station and the probe (or probe card) should be in the same horizontal plane. Adjust the height of the wafer supporting stage and the scanning horizontal line to insure reliable connection between the wafer pins and the probes during testing. Set the parameters of the system.